? 2016 ixys corporation, all rights reserved IXYH40N120C3D1 v ces = 1200v i c90 = 40a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.5v t fi(typ) = 50ns ds100417c(5/16) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1200 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 125c 750 a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 2.9 3.5 v t j = 150 ? c 3.7 v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 80 a i c90 t c = 90c 40 a i f110 t c = 110c 25 a i cm t c = 25c, 1ms 160 a i a t c = 25c 20 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @v ce ? v ces p c t c = 25c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g features ? optimized for low switching losses ? square rbsoa ? positive thermal coefficient of vce(sat) ? anti-parallel ultra fast diode ? avalanche rated ? high current handling capability ? international standard package advantages ? high power density ? low gate drive requirement applications ? high frequency power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts 1200v xpt tm igbt genx3 tm w/ diode
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.00 v t j = 150c 1.75 v i rm 9 a t rr 195 ns r thjc 0.90 c/w i f = 30a,v ge = 0v, -di f /dt = 100a/ s, t j = 100c v r = 600v t j = 100c i f = 30a,v ge = 0v, note 1 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 11 18 s c ie s 1870 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 107 pf c res 38 pf q g(on) 80 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 14 nc q gc 37 nc t d(on) 18 ns t ri 64 ns e on 3.8 mj t d(off) 133 ns t fi 50 ns e of f 1.1 mj t d(on) 22 ns t ri 73 ns e on 6.6 mj t d(off) 160 ns t fi 143 ns e off 2.1 mj r thjc 0.26 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2016 ixys corporation, all rights reserved IXYH40N120C3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0123456 v ce - volts i c - amperes v ge = 15v 13v 12v 7v 9v 6v 8v 10v 11v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 12v 9v 13v 10v 7v 6v 11v 14v 8v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 012345678 v ce - volts i c - amperes 9v 8v 10v v ge = 15v 13v 12v 6v 7v 11v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 80a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 10 7 8 9 101112131415 v ge - volts v ce - volts i c = 80a t j = 25oc 40a 20a fig. 6. input admittance 0 20 40 60 80 100 4 5 6 7 8 9 10 11 12 v ge - volts i c - amperes t j = - 40oc 25oc 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3D1 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w fig. 7. transconductance 0 4 8 12 16 20 24 28 0 102030405060708090100110 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 600v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2016 ixys corporation, all rights reserved IXYH40N120C3D1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 4 8 12 16 20 24 28 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 180 200 10 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on r g = 10 ? ????? v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on r g = 10 ? ???? v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 40 80 120 160 200 240 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 100 120 140 160 180 200 220 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 17. inductive turn-off switching times vs. junction temperature 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 110 120 130 140 150 160 170 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 600v i c = 40a i c = 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3D1 fig. 21. maximum transient thermal impedance (diode) 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 9 12 15 18 21 24 27 30 33 36 39 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 40 80 120 160 200 240 280 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 12 16 20 24 28 32 36 40 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanoseconds 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 600v i c = 40a i c = 80a ixys ref: ixy_40n120c3(4a-z92) 5-09-16-a
? 2016 ixys corporation, all rights reserved IXYH40N120C3D1 fig. 26. recovery time t rr vs. -di f /dt 120 140 160 180 200 220 0 200 400 600 800 1000 -di f /dt [a/s] t rr [ns] t vj = 100oc v r = 600v i f = 60a 30a 15a fig. 27. peak forward voltage v fr , t rr vs -di f /dt 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 -di f /dt [a/s] v fr [v] 0 0.2 0.4 0.6 0.8 1 1.2 t rr [s] t rr t vj = 100oc i f = 30a v fr fig. 22. forward current i f vs v f 0 10 20 30 40 50 60 70 00.511.522.533.54 v f [v] i f [a] 25oc t vj = 150oc 100oc fig. 23. reverse recovery charge q rm vs. -di f /dt 0 1 2 3 4 5 100 1000 -di f /dt [a/s] q rm [c] t vj = 100oc v r = 600v i f = 60a 15a 30a 500 fig. 24. peak reverse current i rm vs. -di f /dt 0 10 20 30 40 50 60 0 200 400 600 800 1000 -di f /dt [a/s] i rm [a] t vj = 100oc v r = 600v i f = 60a, 30a, 15a fig. 25. dynamic parameters q rm , i rm vs. t vj 0 0.5 1 1.5 2 20 40 60 80 100 120 140 160 t vj [oc] i rm & q rm [normalized] i rm q rm
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